Professor Aris Christou
Department of Materials Science and Engineering | Department of Mechanical Engineering
A. James Clark School of Engineering | Universty of Maryland
Research: Compound Semiconductor Reliability and Physics of Failure
Materials Development
High quality epitaxial layers for use in heterojunction devices: Molecular Beam Epitaxy. MBE results are in the area of MBE growth as reported in COMMAD 2002 (see below).
Selected Publications
- A Bayes Approach and Criticality Analysis for Reliability Prediction of AlGaInP Light Emitting Diodes (PDF)
- Calculations of Dielectric Constant for AlGaInAs Quaternary Semiconductor Alloy in the Transparent Region and Above (0.4-4.0eV) (PDF)
- Calculations of Optical Properties for Quaternary III-V Semiconductor Alloys in the Transparent Region and Above (0.2-4.0eV) (PDF)
- Charge Control Analysis of Gallium Nitride Semiconductor Heterostructures and Comparison with GaAs HFET Failure Mechanisms (PDF)
- Degradation Mechanisms of GaN Based Microwave Devices (PDF)
- Degradation Mechanisms of GaN HFETs: Comparison With GaAs Based HEMTs (PDF)
- Fifty Years of Physics of Failure (PDF)
- GaAs and GaN MESFETs and HFETs Processing Technology and Reliability Relationships, A Review (PDF)
- Highly Reliable Nitride-Based LEDs with Internal ESD Protection Diodes (PDF)
- Laser Assisted Molecular Beam Epitaxy (LAMBE) of Compound Semiconductor Buffer Layers and AlN, GaN Structures for High Electron Mobility Transistor (PDF)
- Vertical Cavity Surface Emitting Laser with AlGaInAs/InP Bragg Mirrors Fabricated for Operation at 1.5 mm
