Patents
- “Method for Epitaxial Growth of
GaAs Films Independent of Substrate,” Patent Number
4,226,649 (1980).
- “Refractory-Refractory Oxide InP MIS Schottky Diodes,”
N.C. 63,334 Granted (1988).
- “Low Barrier Height Epitaxial Ge-GaAs Mixer Diode,”
Patent Number 4,316,201 (1980).
- “Multi-Refractory Films for GaAs Devices,”
Patent Number 4,179,533 (1980).
- “Electron Collector for Forming Low-Loss Electron
Images,” Patent Number 4,179,604 (1978).
- “Ion Implanted Evaporated Germanium Layers as n+
Contacts to GaAs,” Patent Number 4,298,403 (1981).
- “Semiconductor Encapsulant for Annealing Ion Implanted
GaAs,” Patent Number 4,267,014 (1980).
- “Refractory Passivated Ion Implanted GaAs Ohmic Contacts,”
Patent Number 4,330,343 (1981).
- “Ohmic Contacts for Group III-V N-Type Semiconductors
Using Epitaxial Ge Films,” Patent Number
4,188,710 (1979).
- “Ion Implanted Improved Ohmic Contacts to GaAs,”
Patent Number 4,263,605 (1980).
- “Formation of Epitaxial Si-Ge Heterostructures by
Solid Phase Epitaxy,” Patent Number 4,975,387
(January 1991).
- “Method of Making Self-Aligned GaAs/AlGaAs FETs,” Patent Number 4,927,782 (May 1990).
- “PLZT Spatial Phase Modulator,” Patent Granted
(2000).
- “Novel Bragg Mirror Reflectors At 1.5µm,”
Patent Pending (2002).
